TPCP8003-H 2007-06-22 1 toshiba field effect transistor silicon n channel mos type (ultra high speed u-mos iii) TPCP8003-H high efficiency dc dc converter applications notebook pc applications portable equipment applications ? small footprint due to a small and thin package ? high speed switching ? small gate charge: q sw = 7.5 nc (typ.) ? low drain-source on-resistance: r ds (on) = 130 m ? (typ.) ? high forward transfer admittance: |y fs | = 5.4 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 100v) ? enhancement mode: v th = 1.1 to 2.3 v (v ds = 10 v, i d = 1ma) absolute maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss 100 v drain-gate voltage (r gs = 20 k ) v dgr 100 v gate-source voltage v gss 20 v dc (note 1) i d 2.2 drain current pulsed (note 1) i dp 8.8 a drain power dissipation (t = 5 s) (note 2a) p d 1.68 w drain power dissipation (t = 5 s) (note 2b) p d 0.84 w single-pulse avalanche energy (note 3) e as 3.93 mj avalanche current i ar 2.2 a repetitive avalanche energy (tc=25 ) (note 4) e ar 0.016 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 4, refer to the next page. using continuously under heavy lo ads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati ng temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec D jeita D toshiba 2-3v1k weight: 0.017 g (typ.) circuit configuration 1 2 3 4 8 7 6 5 8 7 6 5 1 2 3 4 8003h lot no. 0.330.05 0.28 +0.1 -0.11 1.12 +0.13 -0.12 2.40.1 0.475 0.65 2.80.1 a 0.05 m 2.90.1 4 1 5 8 0.80.05 0.170.02 b b 0.05 m a s 0.025 s 1.12 +0.13 -0.12 0.28 +0.1 -0.11 1 source 5 drain 2 source 6 drain 3 source 7 drain 4 gate 8 drain
TPCP8003-H 2007-06-22 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to ambient (t = 5 s) (note 2a) r th (ch-a) 74.4 c/w thermal resistance, channel to ambient (t = 5 s) (note 2b) r th (ch-a) 148.8 c/w note 1: the channel temperature should not exceed 150c during use. note 2: (a) device mounted on a glass-epoxy board (a ) (b) device mounted on a glass-epoxy board (b) note 3: v dd = 24 v, t ch = 25c (initial), l = 1 mh, r g = 1 , i ar = 2.2a note 4: repetitive rating: pulse widt h limited by max channel temperature note 5: (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) * weekly code: (three digits) week of manufacture (01 for first week of the year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year)
TPCP8003-H 2007-06-22 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cutoff current i dss v ds = 100 v, v gs = 0 v ? ? 10 a v (br) dss i d = 10 ma, v gs = 0 v 100 ? ? drain-source breakdown voltage v (br) dsx i d = 10 ma, v gs = ?20 v 60 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 1.1 ? 2.3 v v gs = 4.5 v, i d = 1.1 a ? 140 190 drain-source on-resistance r ds (on) v gs = 10 v, i d = 1.1 a ? 130 180 m forward transfer admittance |y fs | v ds = 10 v, i d = 1.1 a 2.7 5.4 ? s input capacitance c iss ? 360 ? reverse transfer capacitance c rss ? 22 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 75 ? pf rise time t r ? 7 ? turn-on time t on ? 14 ? fall time t f ? 3 ? switching time turn-off time t off duty < = 1%, t w = 10 s ? 17 ? ns v dd ? 80 v, v gs = 10 v, i d = 2.2 a ? 7.5 ? total gate charge (gate-source plus gate-drain) q g v dd ? 80 v, v gs = 5 v, i d = 2.2 a ? 4.5 ? gate-source charge 1 q gs1 ? 1.6 ? gate-drain (?miller?) charge q gd ? 1.3 ? gate switch charge q sw v dd ? 80 v, v gs = 10 v, i d = 2.2 a ? 2.0 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? 8.8 a forward voltage (diode) v dsf i dr = 2.2 a, v gs = 0 v ? ? ? 1.2 v r l = 45.5 v dd ? 50 v 0 v v gs 10 v 4.7 i d = 1.1 a v out
TPCP8003-H 2007-06-22 4 10 0.1 1 10 100 1000 v gs = 4.5 v 10 0.1 1 10 10 100 0.1 25 100 ta = ? 55c 1 0 0.4 0.6 1 0 2 4 6 8 12 i d = 2.2 a 0.2 1.1 0.5 0.8 10 0 2 4 6 8 ta = ? 55c 0 1 3 4 5 25 100 2 0 0 1 2 3 4 2 4 6 8 v gs = 2.5 v 3 2.75 3.25 5 5 3.5 3.75 4.5 6 10 8 0 0 0.2 0.4 0.6 1 4 10 0.8 4.5 3.75 v gs = 2.5 v 2.75 5 8 6 3.5 3.25 3 1 2 3 drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) common source ta = 25c pulse test gate-source voltage v gs (v) i d ? v gs drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) r ds (on) ? i d drain-source on-resistance r ds (on) (m ) drain current i d (a) ? y fs ? ? i d forward transfer admittance |y fs | (s) common source ta = 25c pulse test common source v ds = ? 10 v pulse test common source ta = 25c pulse test common source v ds = 10 v pulse test common source ta = 25c pulse test
TPCP8003-H 2007-06-22 5 0 0 2 6 9 20 40 60 80 140 0 2 4 10 14 v dd = 80 v 20 v ds 8 7 4 40 100 120 3 8 5 6 12 40 20 v gs v dd = 80 v 1 0 40 80 120 160 0 0.4 0.8 1.2 2 1.6 (2) (1) 0 ? 80 ? 40 0 40 80 120 160 0.5 1 2.5 1.5 3 2 0.1 1 10 100 1 100 1000 c iss c oss c rss 10 0 1 10 0.2 0.4 0.6 0.8 1.2 v gs = -1v 0 10 3 0.1 5 1.0 1 50 ? 80 ? 40 0 40 80 120 160 100 150 200 300 v gs = 4.5 v 10 v i d = 2.2a i d = 2.2a 250 1.1a 1.1a total gate charge q g (nc) ambient temperature ta ( c) r ds (on) ? ta drain-source on-resistance r ds (on) (m ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) gate threshold voltage v th (v) ambient temperature ta (c) v th ? ta ambient temperature ta ( c) p d ? ta drain power dissipation p d (w) gate-source voltage v gs (v) dynamic input/output characteristics drain-source voltage v ds (v) (1)device mounted on a glass-epoxy board (a) (note 2a) (2)device mounted on a glass-epoxy board (b) (note 2b) 5s common source ta = 25c pulse test common source pulse test common source v gs = 0 v f = 1 mhz ta = 25c common source v ds = 10 v i d = 1 ma pulse test common source i d = 2.2 a ta = 25c pulse test
TPCP8003-H 2007-06-22 6 0.1 1 10 100 1000 1 10 100 v dss max 0.01 0.1 0.0001 0.001 0.1 10 100 1000 100 1000 1 10 1 0.01 (2) (1) r th ? t w pulse width t w (s) transient thermal impedance r th (c/w) safe operating area drain-source voltage v ds (v) drain current i d (a) i d max (pulse) * single - pulse * single - pulse ta = 25c curves must be derated linearly with increase in temperature. (1)device mounted on a glass-epoxy board (a) (note 2a) (2)device mounted on a glass-epoxy board (b) (note 2b) t = 10 ms * t = 1 ms *
TPCP8003-H 2007-06-22 7 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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